控制铅挥发制备钛酸锶铅半导体陶瓷Semiconductor Ceramics of (Sr, Pb)TiO3 : Preparation and Properties
赵景畅,吴兴惠,李龙土
摘要(Abstract)：
在 Y 掺杂的钛酸锶铅中,分别添加过量 PbO、SiO_2、ZrO_2制备之半导体陶瓷样品,在居里点(约 120℃)以上具有强的 PTC 效应,升阻比接近 5 个数量级。其中,SiO_2或 ZrO_2增强了居里点以下的 NTC 效应,降阻比可达 1个数量级;而少量 PbO 则降低了陶瓷的室温电阻率和 NTC 效应。通过热处理可以使热敏特性由 PTC 型向 NTC-PTC复合型转变,表明 NTC 效应与铅含量变化密切相关,控制铅挥发能获得不同热敏特性的钛酸锶铅半导体陶瓷。
关键词(KeyWords)： 钛酸锶铅半导瓷;PTC效应;NTC效应;控制Pb挥发
基金项目(Foundation): 云南省自然科学基金资助项目(2000E0018M)
作者(Author): 赵景畅,吴兴惠,李龙土
参考文献(References)：
- [1]滨田宗光,田口春男,增村均,等.半导体瓷器组成物[P].特开昭63-280401,1988-11-17.
- [2]LeeC K,LinI N,HuC T.Evolution of microstructure and v-shaped positive temperature coefficient of resistivity of(Pb0.6Sr0.4)TiO3 materials[J].J AmCeramSoc,1994,77(5):1340–1344.
- [3]周东祥,吕文中,龚树萍,等.钛酸锶铅系V 型PTC 材料研究[J].硅酸盐学报,1994,22(4):370–374.
- [4]WangD J,ZengZ Q,GuiZ L, et al.Strontium lead titanate ceramics with positive temperature coefficient of resistance[J].MaterLett,1997,30(4):275–277.
- [5]李鄂胜,陈华毅,连俊杰.一种具有V 型阻温特性的PTC 材料[J].电子元件与材料,1990,9(5):50–54.
- [6]WangD J,GiuJ,GuoY C, et al.Grain boundary effects inNTC-PTC composite thermistor materials[J].J MaterRes,1999,14(1):120–123.
- [7]ChengH T,HuC T,LinY Y, et al.Modeling on the resistivity-temperature properties of(Pb0.6Sr0.4)TiO3 materials prepared by the rapid thermal sintering process[J].JpnJ ApplPhys,1998,37:1932–1938.
- [8]WangD J,GuiZ L,LiL T.Preparation and electrical properties of semiconducting strontium lead titanatePTCR ceramics[J].J MaterSci:Materials in electronics,1997,8:271–276.
- [9]ChouC C,ChangH Y,LinI N, et al.Microscopic examination of the microwave sintered(Pb0.6Sr0.4)TiO3 positive-temperature-coefficient resistor materials[J].JpnJ ApplPhys,1998,37:5269–5272.
- [10]ChangH Y,LiuK S,HuC T, et al.Electrical properties of microwave-sintered(Sr0.4Pb0.6)TiO3 ceramics[J].JpnJ ApplPhys,1996,35:656–662.