刘帅,曹菲,王祖军,邢嘉彬,秦建强

• 1:火箭军工程大学
• 2:西北核技术研究所强脉冲辐射环境模拟与效应全国重点实验室

摘要(Abstract)：

电离总剂量(Total Ionizing Dose, TID)效应诱使PNP双极型晶体管(Bipolar Junction Transistors, BJTs)产生界面态电荷和氧化层俘获电荷，导致基极电流异常增大。鉴于传统解析模型的局限性，本文基于对称双栅MOSFET(Symmetric Double Gate MOSFET,SDG MOS)表面电势理论，通过引入缺陷复合机制，提出了一种改进的PNP BJT过基极电流解析模型，并通过数值仿真揭示了不同界面态电荷密度(1×10~(11)～3×10~(12)cm~2)和氧化层俘获电荷密度(1×10~(11)～1×10~(12) cm~2)下的表面电势分布特征。3CK3B型晶体管在~(60)Co γ射线下的辐照试验(总剂量50/100 krad(Si))表明：改进模型计算结果与试验值的平均相对误差低至24.5%,较传统模型预测精度提升19%。理论分析表明，该模型可准确表征TID效应下双极晶体管表面电势的分布特征与过基极电流的关联机制，为抗辐射加固设计提供理论依据。

关键词(KeyWords)： 电离总剂量效应;双极型晶体管;过基极电流;对称双栅MOSFET;表面电势理论

Abstract:

Keywords:

基金项目(Foundation): 国家自然科学基金重点项目(U2167208);; 陕西省自然科学基金杰出青年科学基金(2024JC-JCQN-10)

作者(Author): 刘帅,曹菲,王祖军,邢嘉彬,秦建强

DOI: 10.14106/j.cnki.1001-2028.2025.0121

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