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为改善碳化硅(SiC)超结MOSFET体二极管的反向恢复特性并降低开关损耗，提出一种集成异质结二极管的超结MOSFET(SJH-MOSFET)新结构。该结构在栅槽底部引入与源极短接的P+多晶硅，与4H-SiC漂移区构成异质结续流二极管；同时增设P+屏蔽层并采用半超结设计以优化电场。基于TCAD的仿真对比分析表明，相较于传统双沟槽结构，新器件的击穿电压提升18.4%至1710 V,比导通电阻降低12.1%至1.45 mΩ·cm2。异质结二极管有效抑制了少子注入，使反向恢复电荷降低60.9%;减小的栅-漏耦合面积则使米勒平台电荷降低79.2%,总开关损耗减少40.4%。该研究为同时优化动态特性与可靠性的高性能SiC功率器件设计提供了有效途径。
Abstract：A novel superjunction MOSFET with an integrated heterojunction diode(SJH-MOSFET) was proposed to enhance the reverse recovery performance of the body diode and reduce switching losses in silicon carbide(SiC) superjunction MOSFETs. The structure incorporated a source-shorted P+ polysilicon at the trench bottom, which formed a heterojunction with the 4H-SiC drift region to function as the body diode. In addition, a P+ shielding layer and a semi-superjunction design were incorporated to optimize the electric field distribution. TCAD simulations comparing the proposed device with a conventional double-trench MOSFET demonstrated that it achieved a breakdown voltage of 1710 V and a specific on-resistance of 1.45 mΩ·cm2, corresponding to an 18.4% increase in breakdown voltage and a 12.1% reduction in specific on-resistance, respectively. The heterojunction diode effectively suppressed minority carrier injection, reducing the reverse recovery charge by 60.9%. By shrinking the effective gate-drain coupling area, the proposed device reduced the Miller plateau charge by 79.2%, resulting in a 40.4% reduction in total switching loss. This work provides a viable design route for high-performance SiC power devices that simultaneously improve dynamic performance and reliability.
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基本信息:
DOI：10.14106/j.cnki.1001-2028.2026.1514
中图分类号:TN386
引用信息:
[1]张闯,张腾,黄润华,等.集成异质结二极管的4H-SiC半超结MOSFET[J].电子元件与材料,2026,45(02):150-156.DOI:10.14106/j.cnki.1001-2028.2026.1514.
基金信息:
江苏省自然科学基金(BK20220212); 江苏省科技攻关计划(BG2024001);江苏省科技攻关计划(BE2022048-1)
2026-02-05
2026-02-05